FIELD: instrumentation, determination of distribution of chemical elements by depth while producing multilayer thin-film structures and semiconductor devices. SUBSTANCE: layer-by-layer analysis of thin films consists in deposition of thin film on substrate, in placement of metal diaphragm with holes above it, in etching of substrate with applied coat with the help of beam of primary ions, in determination of spectrum of secondary ions corresponding to film and substrate which is utilized to establish distribution of components of thin film by etching depth. After deposition of thin film on surface of substrate angle lap is formed at angle of 0.5-2.5 degrees and substrate is moved with reference to hole in diaphragm with rate of 0.1-0.3 mm/min when taking time spectrum of secondary ions. EFFECT: increased accuracy of determination of distribution of elements by depth of specimen, expanded sounding range and reduced time of analysis. 2 dwg
