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MULTILAYER VARISTOR AND PROCESS FOR PRODUCING THE SAME
专利权人:
SFI Electronics Technology Inc.
发明人:
LIEN Ching-Hohn,ZHU Jie-An,XU Zhi-Xian,FANG Ting-Yi,XU Hong-Zong
申请号:
US201715709606
公开号:
US2018090248(A1)
申请日:
2017.09.20
申请国别(地区):
美国
年份:
2018
代理人:
摘要:
A process for producing a multilayer varistor (MLV) if remained its size unchanged as prior arts is favorable to outstandingly increase overall current-carrying area and improve the performance of final produced MLV; and the MLV has laminated a lower cap, an inner-electrode stack formed from piling up several inner-electrode gaps (g), and an upper cap into a unity, and at least satisfies the condition that the lower cap and the upper cap has a thickness smaller than a thickness of the inner-electrode gap (g), but equal to or greater than 0.1 times of the thickness of the inner-electrode gap (g).
来源网站:
中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/

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