您的位置: 首页 > 农业专利 > 详情页

Common platform for one-level memory architecture and two-level memory architecture
专利权人:
Intel Corporation
发明人:
Ray Joydeep,George Varghese,Sodhi Inder M.,Wilcox Jeffrey R.
申请号:
US201314140261
公开号:
US9600413(B2)
申请日:
2013.12.24
申请国别(地区):
美国
年份:
2017
代理人:
Lowenstein Sandler LLP
摘要:
Technologies for one-level memory (1LM) and two-level memory (2LM) configurations in a common platform are described. A processor includes a first memory interface coupled to a first memory device that is located off-package of the processor and a second memory interface coupled to a second memory device that is located off-package of the processor. The processor also includes a multi-level memory controller (MLMC) coupled to the first memory interface and the second memory interface. The MLMC includes a first configuration and a second configuration. The first memory device is a random access memory (RAM) of a one-level memory (1LM) architecture in the first configuration. The first memory device is a first-level RAM of a two-level memory (2LM) architecture in the second configuration and the second memory device is a second-level non-volatile memory (NVM) of the 2LM architecture in the second configuration.
来源网站:
中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/

意 见 箱

匿名:登录

个人用户登录

找回密码

第三方账号登录

忘记密码

个人用户注册

必须为有效邮箱
6~16位数字与字母组合
6~16位数字与字母组合
请输入正确的手机号码

信息补充