METHODS OF FORMING HIGH DENSITY METAL WIRING FOR FINE LINE AND SPACE PACKAGING APPLICATIONS AND STRUCTURES FORMED THEREBY

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专利权人:

Hwang Chi-won;Tomita Yoshihiro

发明人:

Hwang Chi-won,Tomita Yoshihiro

申请号：

US200711968116

公开号：

US2017004978(A1)

申请日:

2007.12.31

申请国别(地区):

美国

年份:

2017

代理人:

摘要：

Methods of forming microelectronic device structures are described. Those methods may include forming at least one opening through a build up structure and a photo sensitive material disposed on the build up structure, wherein the build up structure comprises a portion of a package substrate, filling the at least one opening with a metal containing nanopaste, and sintering the metal containing nanopaste to form a bulk property metal structure in the at least one opening.

来源网站：

中国工程科技知识中心

来源网址：

http://www.ckcest.cn/home/