UNIVERSITY OF SOUTHERN CALIFORNIA ;REGENTS OF THE UNIVERSITY OF CALIFORNIA
发明人:
Cronin Stephen B.,Dhall Rohan,Lake Roger,Li Zhen,Neupane Mahesh,Wickramaratne Darshana
申请号：
US201515536628
公开号：
US2018026422(A1)
申请日:
2015.12.16
申请国别(地区):
美国
年份:
2018
代理人:
摘要：
Bulk direct transition metal dichalcogenide (TMDC) may have an increased interlayer separation of at least 0.5, 1, or 3 angstroms more than its bulk value. The TMDC may be a bulk direct band gap molybdenum disulfide (MoS2) or a bulk direct band gap tungsten diselenide (WSe2). Oxygen may be between the interlayers. A device may include the TMDC, such as an optoelectronic device, such as an LED, solid state laser, a photodetector, a solar cell, a FET, a thermoelectric generator, or a thermoelectric cooler. A method of making bulk direct transition metal dichalcogenide (TMDC) with increased interlayer separation may include exposing bulk direct TMDC to a remote (aka downstream) oxygen plasma. The plasma exposure may cause an increase in the photoluminescence efficiency of the TMDC, more charge neutral doping, or longer photo-excited carrier lifetimes, as compared to the TMDC without the plasma exposure.
