FERROMAGNETIC TUNNEL JUNCTION STRUCTURE AND MAGNETORESISTIVE ELEMENT USING SAME

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专利权人:

NATIONAL INSTITUTE FOR MATERIALS SCIENCE

发明人:

INOMATA KOICHIRO,WANG WENHONG,SUKEGAWA HIROAKI

申请号：

EP20100777669

公开号：

EP2434556(B1)

申请日:

2010.05.07

申请国别(地区):

欧洲专利局

年份:

2016

代理人:

摘要：

For the present ferromagnetic tunnel junction structure, employed is a means characterized by using an MgO barrier and using a Co 2 FeAl full-Heusler alloy for any of the ferromagnetic layers therein. The ferromagnetic tunnel junction structure is characterized in that Co 2 FeAl includes especially a B2 structure and one of the ferromagnetic layers is formed on a Cr buffer layer. The magnetoresistive element is characterized in that the ferromagnetic tunnel junction structure therein is any of the above-mentioned ferromagnetic tunnel junction structure. Accordingly, a large TMR, especially a TMR over 100% at room temperature can be attained, using Co 2 FeAl having a smallest a though not a half-metal.

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