Metal nitride material for thermistor, method for producing same, and film type thermistor sensor

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专利权人:

MITSUBISHI MATERIALS CORPORATION

发明人:

Fujita Toshiaki,Tanaka Hiroshi,Nagatomo Noriaki

申请号：

US201414469184

公开号：

US9534961(B2)

申请日:

2014.08.26

申请国别(地区):

美国

年份:

2017

代理人:

Locke Lord LLP

摘要：

Provided are a metal nitride material for a thermistor, which has high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor.;The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: (M1−vAv)xAly(N1−wOw)z (where “M” represents at least one element selected from Ti, V, Cr, Mn, Fe, and Co, “A” represents at least one element selected from Mn, Cu, Ni, Fe, and Co, which is different from the selected “M”, 0.0

来源网站：

中国工程科技知识中心

来源网址：

http://www.ckcest.cn/home/