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Method for Forming Heterogeneous Single Garnet Based Crystals for Passive Q-Switched Lasers and Microlasers
专利权人:
Clemson University
发明人:
Kolis Joseph W.,McMillen Colin D.,Mann J. Matthew
申请号:
US201414332672
公开号:
US2016326666(A1)
申请日:
2014.07.16
申请国别(地区):
美国
年份:
2016
代理人:
摘要:
Disclosed are heterogeneous crystals for use in a laser cavity and methods of forming the crystals. A crystal can be a monolithic crystal containing a garnet-based activator region and a garnet-based Q-switch. Disclosed methods include hydrothermal growth techniques for the growth of differing epitaxial layers on a host. A YAG host material can be doped in one region with a suitable activator ion for lasing and can be formed with another region that is doped with a saturable absorber to form the Q-switch. Regions can be formed with controlled thickness in conjunction. Following formation, a heterogeneous crystal can be cut, polished and coated with mirror films at each end for use in a laser cavity to provide short pulses of high power emissions using high frequency pulse modes.
来源网站:
中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/

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