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PSEUDO RESISTANCE CIRCUIT AND CHARGE DETECTION CIRCUIT
专利权人:
Murata Manufacturing Co., Ltd.
发明人:
TAKASE Yasuhide
申请号:
US201615353753
公开号:
US2017070209(A1)
申请日:
2016.11.17
申请国别(地区):
美国
年份:
2017
代理人:
摘要:
A pseudo resistance circuit includes a first gate voltage adjustment circuit that adjusts respective currents of first and second current sources and also adjusts a gate voltage of a second field effect transistor to equalize or substantially equalize a drain voltage of the second field effect transistor and a voltage of a first end portion of a reference resistance element and controls a drain voltage of a first field effect transistor and the drain voltage of the second field effect transistor to maintain a constant or substantially constant relationship with each other; and a second gate voltage adjustment circuit that adjusts a gate voltage of the first field effect transistor to control the gate voltage of the second field effect transistor and the gate voltage of the first field effect transistor to maintain a constant or substantially constant relationship with each other.
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