Method of making a semiconductor device formed by thermal annealing

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专利权人:

INFINEON TECHNOLOGIES AG

发明人:

Breymesser Alexander,Voss Stephan

申请号：

US201514983611

公开号：

US9704712(B1)

申请日:

2015.12.30

申请国别(地区):

美国

年份:

2017

代理人:

Viering, Jentschura & Partner mbB

摘要：

According to various embodiments, a method may include: structuring a semiconductor region to form a structured surface of the semiconductor region; disposing a dopant in the semiconductor region; and activating the dopant at least partially by irradiating the structured surface at least partially with electromagnetic radiation having at least one discrete wavelength to heat the semiconductor region at least partially.

来源网站：

中国工程科技知识中心

来源网址：

http://www.ckcest.cn/home/