INSTITUTE OF SOLID STATE PHYSICS, UNIVERSITY OF LATVIA
发明人:
CIKVAIDZE, GEORGIJS,KALLE, ALEXANDE
申请号：
EP20130196587
公开号：
EP2883837(B1)
申请日:
2013.12.11
申请国别(地区):
欧洲专利局
年份:
2016
代理人:
摘要：
The invention relates a method of processing low-grade metallurgical silicon for the purpose of obtaining silicon suitable for solar (photovoltaic) elements. The proposed method for refining silicon comprises electron beam melting of silicon using a cold cathode electron beam gun followed by vacuum purification of low-grade silicon from impurities and the molten mass crystallization, wherein the molten mass is cooled down at a temperatures range from 1400 °C to 900 °C, at the time from 40 to 60 minutes to form quantum dots clusters in the supercooling of concentration centers regime where cluster sizes of quantum dots are 30 - 50 nm and average sizes of quantum dots obtained no more than 5 nm.
