Leobandung Effendi,Li Ning,Ning Tak H.,Plouchart Jean-Oliver,Sadana Devendra K.
申请号：
US201414541986
公开号：
US9728671(B2)
申请日:
2014.11.14
申请国别(地区):
美国
年份:
2017
代理人:
Tutunjian & Bitetto, P.C. `Percello Louis J.
摘要：
An optoelectronic light emission device is provided that includes a gain region of at least one type III-V semiconductor layer that is present on a lattice mismatched semiconductor substrate. The gain region of the type III-V semiconductor layer has a nanoscale area using nano-cavities. The optoelectronic light emission device is free of defects.
