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ELECTRON MICROSCOPE AND FLAW SHAPE CONFIRMING METHOD
专利权人:
SONY CORP
发明人:
SHINKAWA TERUSHI
申请号:
JP19980352776
公开号:
JP2000180391(A)
申请日:
1998.12.11
申请国别(地区):
日本
年份:
2000
代理人:
摘要:
PROBLEM TO BE SOLVED: To obtain an electron microscope capable of enhancing the accuracy of alignment while shortening the time required in the observation of a flaw and accurately confirming the shape of the flaw. SOLUTION: In an SEM constituted of an electron gun 1, converging lenses 2, 3, a scanning coil 4, an object lens 5, an XY stage 6, a reflected electron sensor 7, a secondary electron sensor 8, an amplifier 9, a scanning signal generator 10 and a cathode ray tube (CRT) 11, a laser marker 12 is provided on the peripheral part of the electron gun 1. In the confirmation of the shape of the flaw on the surface of a wafer, at first, the inspection data formed by observing the surface of the wafer by a flaw inspecting device is converted to coordinates for the SEM and, before the alignment of the wafer is performed in the SEM, marks are formed on the surface of the wafer, for example, at two places by a laser marker 12 and, thereafter, a position is confirmed by using the marks when the alignment of the wafer is performed and the correction of the origin is performed. Subsequently, the shape of the surface flaw of the wafer is confirmed in the SEM.
来源网站:
中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/

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