Yang Tai-I,Lin Jung-I,Lin Ta-Chun,Lin Tien-Lu,Wang Chen-Jong
申请号：
US201615364955
公开号：
US2017084646(A1)
申请日:
2016.11.30
申请国别(地区):
美国
年份:
2017
代理人:
摘要：
A method for manufacturing an image sensor with deep trench spacing isolation is provided. A trench is formed in a semiconductor substrate, around and between a plurality of pixel regions of the semiconductor substrate. A cap is formed using epitaxy to seal a gap between sidewalls of the trench. Pixel sensors corresponding to the plurality of pixel regions are formed over or within the corresponding pixel regions. An image sensor resulting from the method is also provided.
