Chih-Hong Hwang,Chun-Lin Chang,Chi-Ming Yang,Chin-Hsiang Lin,Wen-Yu Ku
申请号：
US13443994
公开号：
US08664622B2
申请日:
2012.04.11
申请国别(地区):
US
年份:
2014
代理人:
摘要：
An apparatus comprises an ionization chamber for providing ions during a process of ion implantation, and an electron beam source device inside the ionization chamber. The electron beam source device comprises a field emission array having a plurality of emitters for generating electrons in vacuum under an electric field.
