Implant material and method for manufacturing the same

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专利权人:

Toyo Advanced Technologies Co.; Ltd.

发明人:

Nikawa, Hiroki,Makihira, Seichiyou,Mine, Yuichi,Abe, Yoshinori,Nakatani, Tatsuyuki,Okamoto, Keishi,Nitta, Yuki

申请号：

AU2009339979

公开号：

AU2009339979B2

申请日:

2009.02.10

申请国别(地区):

AU

年份:

2013

代理人:

摘要：

Disclosed is an implant material comprising a base and a carbonaceous thin film formed on the surface of the base and containing silicon. The carbonaceous thin film contains a C-C component wherein carbon atoms are bonded with each other, and an SiC component wherein a carbon atom and a silicon atom are bonded with each other. The ratio of the SiC component in the carbonaceous thin film is not less than 0.06.

来源网站：

中国工程科技知识中心

来源网址：

http://www.ckcest.cn/home/