POLAR FLUID GATED FIELD EFFECT DEVICES

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专利权人:

GRAPHWEAR TECHNOLOGIES INC.

发明人:

GUDIBANDE Rajatesh Ravindra,RADHAKRISHNAN Saurabh,GALANO Antoine,Vora Meet

申请号：

US201816221384

公开号：

US2019257732(A1)

申请日:

2018.12.14

申请国别(地区):

美国

年份:

2019

代理人:

摘要：

Disclosed herein are nanoscale field effect transistors (NFETs), e.g., graphene based field effect transistors (GFETs), that do not have physical gates. Instead, they are gated by polar fluids. Systems and methods using such transistors are also disclosed.

来源网站：

中国工程科技知识中心

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http://www.ckcest.cn/home/