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Acoustic resonator device with single crystal piezo material and capacitor on a bulk substrate
专利权人:
Akoustis, Inc.
发明人:
Shealy Jeffrey B.
申请号:
US201414298076
公开号:
US9537465(B1)
申请日:
2014.06.06
申请国别(地区):
美国
年份:
2017
代理人:
Ogawa Richard T.`Ogawa P.C.
摘要:
A method of manufacturing an integrated circuit. This method includes forming an epitaxial material comprising single crystal piezo material overlying a surface region of a substrate to a desired thickness and forming a trench region to form an exposed portion of the surface region through a pattern provided in the epitaxial material. Also, the method includes forming a topside landing pad metal and a first electrode member overlying a portion of the epitaxial material and a second electrode member overlying the topside landing pad metal. Furthermore, the method can include processing the backside of the substrate to form a backside trench region exposing a backside of the epitaxial material and the landing pad metal and forming a backside resonator metal material overlying the backside of the epitaxial material to couple to the second electrode member overlying the topside landing pad metal.
来源网站:
中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/

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