Park Kyung-Bae,Ryu Myung-Kwan,Seon Jong-Baek,Lee Sang-Yoon,Koo Bon-Won
申请号：
US201113064366
公开号：
US9564531(B2)
申请日:
2011.03.22
申请国别(地区):
美国
年份:
2017
代理人:
Harness, Dickey & Pierce, P.L.C.
摘要：
Thin film transistors including a semiconductor channel disposed between a drain electrode and a source electrode; and a gate insulating layer disposed between the semiconductor channel and a gate electrode wherein the semiconductor channel includes a first metal oxide, the gate insulating layer includes a second metal oxide, and at least one metal of the second metal oxide is the same as at least one metal of the first metal oxide, methods of manufacturing thin film transistors, and semiconductor device including thin film transistors.
