Current aperture vertical electron transistors with ammonia molecular beam epitaxy grown p-type gallium nitride as a current blocking layer

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专利权人:

The Regents of the University of California

发明人:

Chowdhury Srabanti,Yeluri Ramya,Hurni Christophe,Mishra Umesh K.,Ben-Yaacov Ilan

申请号：

US201414566443

公开号：

US9590088(B2)

申请日:

2014.12.10

申请国别(地区):

美国

年份:

2017

代理人:

Gates & Cooper LLP

摘要：

A current aperture vertical electron transistor (CAVET) with ammonia (NH3) based molecular beam epitaxy (MBE) grown p-type Gallium Nitride (p-GaN) as a current blocking layer (CBL). Specifically, the CAVET features an active buried Magnesium (Mg) doped GaN layer for current blocking purposes. This structure is very advantageous for high power switching applications and for any device that requires a buried active p-GaN layer for its functionality.

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中国工程科技知识中心

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