Memory device including resistance random access memory, and storing method that stores data in the resistance random access memory

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专利权人:

RENESAS ELECTRONICS CORPORATION

发明人:

Uejima Kazuya

申请号：

US201615224524

公开号：

US9892788(B2)

申请日:

2016.07.30

申请国别(地区):

美国

年份:

2018

代理人:

McGinn I.P. Law Group, PLLC.

摘要：

It is required to store data to be stored for a holding period required for this data and then erase the data while suppressing power consumption. A memory device 10 to solve such a problem has the following configuration. The memory device 10 includes an ReRAM (resistance random access memory) 100 and a storage controller 101. The storage controller 101 performs control to store, in a storing condition according to a holding period required for data to be stored, the data in the ReRAM 100.

来源网站：

中国工程科技知识中心

来源网址：

http://www.ckcest.cn/home/