Variable resistance element, semiconductor device having variable resistance element, semiconductor device manufacturing method, and programming method using variable resistance element

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专利权人:

NEC CORPORATION

发明人:

Tada Munehiro,Sakamoto Toshitsugu,Miyamura Makoto

申请号：

US201314385623

公开号：

US9548115(B2)

申请日:

2013.03.14

申请国别(地区):

美国

年份:

2017

代理人:

摘要：

This variable resistance element is provided with a variable resistance film, a first electrode, which is disposed in contact with one surface of the variable resistance film, and a second electrode, which is disposed in contact with the other surface of the variable resistance film. The first and the second electrodes have corner portions, respectively, and the distance between the corner portions of the first and the second electrodes is set equal to the shortest distance between the first and the second electrodes. Furthermore, the variable resistance element has a third electrode, which is disposed on the one surface of the variable resistance film.

来源网站：

中国工程科技知识中心

来源网址：

http://www.ckcest.cn/home/