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Radio-frequency amplifier circuit and control voltage setting method for radio-frequency amplifier circuit
专利权人:
MURATA MANUFACTURING CO., LTD.
发明人:
Wakaki Ken
申请号:
US201514926367
公开号:
US9479117(B2)
申请日:
2015.10.29
申请国别(地区):
美国
年份:
2016
代理人:
Pearne & Gordon LLP
摘要:
A radio-frequency amplifier circuit includes first and second FETs cascode-connected to each other. The gate of the first FET is connected to a radio-frequency input terminal, and the drain of the second FET is connected to a radio-frequency output terminal. The source of the first FET is connected to a ground, and the drain of the first FET and the source of the second FET are connected to each other. A drive voltage is applied to the drain of the second FET. A bias setting unit is connected to the gate of the second FET. The bias setting unit sets a second control voltage to be applied to the second FET so that a node voltage between the drain of the first FET and the source of the second FET will be substantially half of the drive voltage.
来源网站:
中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/

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