Provided is a molecular beam epitaxy growth method for a high-speed vertical-cavity surface-emitting laser.The method comprises performing a deoxidation pretreatment on a GaAs substrate (100), and epitaxially growing a GaAs buffer layer, a lower DBR (20), an active region (10), an oxidation confinement layer (34) and an upper DBR (30) sequentially. In the growth process, the active region (10) is sandwiched between the upper DBR (30) and the lower DBR (20), and a ä-doping method is applied to the middle position of a potential barrier (11) of the active region (1 0 ), wherein carbon (C) is adopted as a doping source, and after the completion of ä-doping, the growth is stopped for a period of time under the protecti on of As.By means of the above-mentioned method, the technical problems of threshold reduction, differential gain increase and non-linear gain compression reduction are solved, and the good effects of optical loss reduction, line width decrease and output power and intrinsic bandwidth enhancment
