UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA
发明人:
LI, Junhong
申请号：
WO2016CN111089
公开号：
WO2017114235(A1)
申请日:
2016.12.20
申请国别(地区):
世界知识产权组织国际局
年份:
2017
代理人:
摘要：
A lateral insulated gate bipolar transistor (LIGBT) and method for eliminating a transistor tail current. A lateral insulated gate bipolar transistor comprises a silicon substrate (1) and, provided above the silicon substrate (1) and a buried oxide (18), a drift region (2), a channel region (3), a heavily doped ohmic contact region (4), a cathode (5), gate dielectric (8), an anode lead wire (10), a gate (11), a cathode lead wire (12), and an anode (13). An electric field enhancement unit (20) is provided at an upper surface of a portion of the drift region (2) between the anode (13) and the channel region (3), and is used to produce an electric field in a direction from the anode (13) to a lower surface of the electric field enhancement unit (20). The electric field enhancement unit is separated from the drift region (2) by the insulating dielectric (6). The invention realizes improvement of both the conduction performance and the switching performance of the LIGBT device.
