Film deposition method and film deposition device

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专利权人:

Fujifilm Corporation

发明人:

Nishida, Hiroyuki

申请号：

EP20110154967

公开号：

EP2363511(B1)

申请日:

2011.02.18

申请国别(地区):

欧洲专利局

年份:

2017

代理人:

摘要：

A gas barrier film comprises: a base film; and a silicon nitride layer deposited on a surface of the base film, wherein in a direction of a thickness of the silicon nitride layer, a first mean density of a region of the silicon nitride layer closer to the base film and having a 20% thickness of the silicon nitride layer is lower than a second mean density of a region opposite from the base film and having a 20% thickness of the silicon nitride layer, and a third mean density of a middle region having a 20% thickness of the silicon nitride layer lies between the first mean density and the second mean density.

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