TRANSMISSION GATE FOR BIAS VOLTAGE GENERATION

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专利权人:

Qualcomm Incorporated

发明人:

AZIN, Meysam,HUANG, Wenchang,WANG, Le

申请号：

EP20150722298

公开号：

EP3134970(A1)

申请日:

2015.04.14

申请国别(地区):

欧洲专利局

年份:

2017

代理人:

摘要：

An apparatus includes a transmission gate configured to generate a signal based on a first differential input signal and a second differential input signal. The apparatus further includes biasing circuitry responsive to the transmission gate and configured to output a bias voltage based on the signal.

来源网站：

中国工程科技知识中心

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http://www.ckcest.cn/home/