SEMICONDUCTOR DEVICE WITH AN ELECTRODE STRUCTURE COMPRISING AN ALUMINIUM OR ALUMINIUM ALLOY LAYER WITH {110} TEXTURE, METHOD OF MANUFACTURING SAID SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE COMPRISING SAID SEMICONDUCTOR DEVICE
A semiconductor device (200, 300, 400) includes a semiconductor substrate (108, 208) in which a semiconductor element (150) is formed, an electrode structure (151, 202, 207) provided on a first surface (108d) of the semiconductor substrate (108, 208) to be electrically connected to the semiconductor element (150) and in which a first Al metal layer (105) composed of Al or Al alloy, a Cu diffusion-prevention layer (107) composed of e.g. Ti, TiN, TiW or W, a second Al metal layer (106) composed of Al or Al alloy and a Ni, Cu or Cu alloy layer (104) are formed in this order, and a conductive member (102) which is bonded to the electrode structure (151, 202, 207) via a sintered copper layer (103) disposed on a surface (104a) of the Ni, Cu or Cu alloy layer (104). In this semiconductor device, a crystal plane orientation of Al crystal grains on a surface (106a) of the second Al metal layer (106) is principally on the (110) plane. The semiconductor device (200) may comprise a second electrode structure (152) on the
