EPITAXIAL STRUCTURE AND EPITAXIAL GROWTH METHOD FOR FORMING EPITAXIAL LAYER WITH CAVITIES

• 收藏
• 分享

专利权人:

Lextar Electronics Corporation

发明人:

CHEN Jun-Rong,CHOU Hsiu-Mei,YE Jhao-Cheng

申请号：

US201715428128

公开号：

US2017148951(A1)

申请日:

2017.02.08

申请国别(地区):

美国

年份:

2017

代理人:

摘要：

An epitaxial structure includes a substrate, a first epitaxial layer and a second epitaxial layer. The substrate has a surface, and the first epitaxial layer is disposed over the substrate and defines a plurality of stepped air voids and an opening over each of the stepped air voids. The second epitaxial layer is disposed on the first epitaxial layer and collectively defines the stepped air voids with the first epitaxial layer.

来源网站：

中国工程科技知识中心

来源网址：

http://www.ckcest.cn/home/