This laser processing method includes: a first step in which a laser beam having a wavelength greater than 1064 nm is focused on an object to be processed, using the rear surface of a silicon substrate as the laser beam incidence surface, and a first focal point of the laser beam is moved along a planned cutting line to form a first modified region along the planned cutting line; and a second step which is performed after the first step, and in which the laser beam having a wavelength greater than 1064 nm is focused on the object to be processed, using the rear surface of the silicon substrate as the laser beam incidence surface, and a second focal point of the laser beam is moved along the planned cutting line, while the second focal point of the laser beam is offset relative to the position corresponding to the first focal point of the laser beam, to form a second modified region along the planned cutting line.
