Ion beam sputtering with ion assisted deposition for coatings on chamber components

• 收藏
• 分享

专利权人:

Applied Materials, Inc.

发明人:

Sun Jennifer Y.,Firouzdor Vahid,Kanungo Biraja Prasad,Cho Tom K.,Achutharaman Vedapuram S.,Zhang Ying

申请号：

US201414562339

公开号：

US9725799(B2)

申请日:

2014.12.05

申请国别(地区):

美国

年份:

2017

代理人:

Lowenstein Sandler LLP

摘要：

A method of manufacturing an article includes providing a component for an etch reactor. Ion beam sputtering with ion assisted deposition (IBS-IAD) is then performed to deposit a protective layer on at least one surface of the component, wherein the protective layer is a plasma resistant film having a thickness of less than 1000 μm.

来源网站：

中国工程科技知识中心

来源网址：

http://www.ckcest.cn/home/