FIELD: chemistry.SUBSTANCE: invention relates to a method for europium disilicide epitaxial film production on a silicon substrate, and can be used to create source/drain contacts in MOSFET technology with a Schottky barrier (SB-MOSFET), and to create spintronic devices as contact injector/detector of spin-polarized carriers. The method consists in atomic europium flow deposition under pressure P=(0.55÷)×10Torr on a clean Si(001) substrate surface, heated to T=400±20°C, until a europium disilicide film of the desired thickness is formed. When the film thickness reaches 100 Å or more, further deposition is performed at T=560±20°C to form a europium disilicide film of the desired thickness.EFFECT: formation of epitaxial EuSifilms by molecular-beam epitaxy, which allows to achieve the required quality of contacts in microelectronics.4 dwg, 3 ex
