Chaoyu WU,Chun-I WU,Junkai HUANG,Duxiang WANG,Hongliang LIN,Yi-Jui HUANG,Ching-Shan TAO
申请号：
US16900879
公开号：
US20200305354A1
申请日:
2020.06.13
申请国别(地区):
US
年份:
2020
代理人:
摘要：
A light-emitting diode includes a PN junction light-emitting portion over a substrate； wherein the PN junction light-emitting portion includes an alternating-layer structure of alternating a strained light-emitting layer and a barrier layer, wherein the strained light-emitting layer with a component formula of GaXIn(1-X)AsY1P(1-Y), 0<；X<；1 and 0<；Y≤；0.05, and the barrier layer has a component formula of (AlaGa1-A)bIn(1-b)P, 0.3≤；a≤；1 and 0<；b<；1； when a current of 350 mA flows through the PN junction light-emitting portion in forward direction, the light-emitting diode has an output power at least 202.2 mW.
