Method for manufacturing insulated gate type switching device having low-density body region and high-density body region

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专利权人:

TOYOTA JIDOSHA KABUSHIKI KAISHA;DENSO CORPORATION

发明人:

Soeno Akitaka,Takeuchi Yuichi,Soejima Narumasa

申请号：

US201415114461

公开号：

US9773883(B2)

申请日:

2014.10.06

申请国别(地区):

美国

年份:

2017

代理人:

Oliff PLC

摘要：

A method is provided for manufacturing an insulated gate type switching device. The method includes: implanting second conductivity type impurities into a surface of a semiconductor substrate so as to form a second region of a second conductivity type in the surface; forming a third region of the second conductivity type having a second conductivity type impurity density lower than the second region on the surface by epitaxial growth: and forming a trench gate electrode.

来源网站：

中国工程科技知识中心

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http://www.ckcest.cn/home/