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METHOD FOR FABRICATING MODIFIED-SILICON-BASED NEGATIVE-ELECTRODE MATERIAL BY VAPOR DEPOSITION
专利权人:
TIAN, Dong
发明人:
TIAN, Dong
申请号:
WO2016CN86289
公开号:
WO2017008615(A1)
申请日:
2016.06.17
申请国别(地区):
世界知识产权组织国际局
年份:
2017
代理人:
摘要:
Provided is a method for fabricating a modified-silicon-based negative-electrode material by vapor deposition; first, nano-silicon is mixed with a transition-metal compound aqueous solution, and the mixture is heated until moisture evaporates; next, a reducing agent is used to reduce the nano-silicon carrying the transition-metal compound, then an amorphous carbon source is used to deposit amorphous carbon onto the nano-silicon carrying the transition metal; lastly, an acidic medium solution is used to remove the transition metal on the nano-silicon having the amorphous carbon deposited thereon. A transition metal is used as a catalyst, such that the amorphous carbon and the nano-silicon are chemically bonded together; the amorphous carbon is deposited onto the nano-silicon to obtain a composite negative-electrode material of nano-silicon and amorphous carbon; the amorphous carbon has a porous structure that mitigates the silicon-powder volume expansion resulting from electrical charging and discharging; at t
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