A semiconductor device, including a substrate; a first conductive type well and a second conductive type body region at an upper portion of the substrate; a field plate on the first conductive type well, the field plate including a semiconductor material or an insulative nitride; and a gate electrode extending in a lateral direction on the substrate from a lateral portion of the second conductive type body region to a lateral portion of the first conductive type well, the gate electrode overlapping the field plate.
