Rohm and Haas Electronic Materials CMP Holdings, Inc.
发明人:
Wang Hongyu
申请号：
US201815991567
公开号：
US2018371292(A1)
申请日:
2018.05.29
申请国别(地区):
美国
年份:
2018
代理人:
摘要：
The aqueous solution is useful for chemical mechanical polishing a semiconductor substrates. The solution includes by weight percent, 0 to 25 oxidizing agent, 0.05 to 5 guanidine hydrochloride, guanidine sulfate, amino-guanidine hydrochloride, guanidine acetic acid, guanidine carbonate, guanidine nitrate or a combination thereof, 0.1 to 1 glycine, 0.1 to 5 N-methylethanolamine, 0.05 to 5 organic acid complexing agent, 0.05 to 2.2 benzotriazole inhibitor 0 to 5 colloidal silica, and balance water. The solution has a buffering capacity, β of 0.1 to 0.8 with the buffering components being free of alkali, alkaline and transition metal ions.
