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HIGHLY ETCH-RESISTANT POLYMER BLOCK FOR USE IN BLOCK COPOLYMERS FOR DIRECTED SELF-ASSEMBLY
专利权人:
BREWER SCIENCE, INC.
发明人:
XU, KUI,HOCKEY, MARY ANN,GUERRERO, DOUGLAS
申请号:
EP20140779168
公开号:
EP2981985(A4)
申请日:
2014.04.01
申请国别(地区):
欧洲专利局
年份:
2016
代理人:
摘要:
Compositions for directed self-assembly (DSA) patterning techniques are provided. Methods for directed self-assembly are also provided in which a DSA composition comprising a block copolymer is applied to a substrate and then self-assembled to form the desired pattern. The block copolymer includes at least two blocks of differing etch rates, so that one block (e.g., polymethylmethacrylate) is selectively removed during etching. Because the slower etching block (e.g., polystyrene) is modified with an additive to further slow the etch rate of that block, more of the slow etching block remains behind to fully transfer the pattern to underlying layers.
来源网站:
中国工程科技知识中心
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http://www.ckcest.cn/home/

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