Group III nitride crystals, their fabrication method, and method of fabricating bulk group III nitride crystals in supercritical ammonia

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专利权人:

SixPoint Materials, Inc.

发明人:

Hashimoto Tadao

申请号：

US201514957536

公开号：

US9670594(B2)

申请日:

2015.12.02

申请国别(地区):

美国

年份:

2017

代理人:

Strategic Innovation IP Law Offices, P.C.

摘要：

In one instance, the invention provides a group III nitride crystal having a first side exposing nitrogen polar c-plane of single crystalline or highly oriented polycrystalline group III nitride and a second side exposing group III polar surface, polycrystalline phase, or amorphous phase of group III nitride. Such structure is useful as a seed crystal for ammonothermal growth of bulk group III nitride crystals. The invention also discloses the method of fabricating such crystal. The invention also discloses the method of fabricating a bulk crystal of group III nitride by ammonothermal method using such crystal.

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