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SEMICONDUCTOR DEVICE HAVING BURIED METAL LINE AND FABRICATION METHOD OF THE SAME
专利权人:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
发明人:
OHTOU Tetsu,ONIKI Yusuke,FUJIWARA Hidehiro
申请号:
US201715453963
公开号:
US2018151494(A1)
申请日:
2017.03.09
申请国别(地区):
美国
年份:
2018
代理人:
摘要:
A device is disclosed that includes a memory bit cell, a first word line, a pair of metal islands and a pair of connection metal lines. The first word line is disposed in a first metal layer and is electrically coupled to the memory bit cell. The pair of metal islands are disposed in the first metal layer at opposite sides of the word line and are electrically coupled to a power supply. The pair of connection metal lines are disposed in a second metal layer and are configured to electrically couple the metal islands to the memory bit cell respectively.
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