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Semiconductor device having buried gate structure and method for manufacturing the same, memory cell having the same and electronic device having the same
专利权人:
SK Hynix Inc.
发明人:
Kang Dong-Kyun,Cho Ho-Jin
申请号:
US201715456119
公开号:
US9947667(B2)
申请日:
2017.03.10
申请国别(地区):
美国
年份:
2018
代理人:
IP & T Group LLP
摘要:
A semiconductor device includes a substrate comprising a trench; a gate dielectric layer formed over a surface of the trench; a gate electrode positioned at a level lower than a top surface of the substrate, and comprising a lower buried portion embedded in a lower portion of the trench over the gate dielectric layer and an upper buried portion positioned over the lower buried portion; and a dielectric work function adjusting liner positioned between the lower buried portion and the gate dielectric layer; and a dipole formed between the dielectric work function adjusting liner and the gate dielectric layer.
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