Thin film deposition system capable of physical vapor deposition and chemical vapor deposition simultaneously

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专利权人:

The Regents of the University of California

发明人:

Kobayashi Nobuhiko

申请号：

US201615544100

公开号：

US2018002810(A1)

申请日:

2016.01.20

申请国别(地区):

美国

年份:

2018

代理人:

摘要：

A multi-deposition chamber apparatus is provided that includes a first deposition chamber that includes a substrate holder, a retractable sputter gun, a gate valve, an output port, a retractable chamber separator, a gas input port, a gas output port, and an electron cyclotron resonance plasma source, where the retractable chamber separator is configured to selectively segment the first deposition chamber to form a second deposition chamber, where the second deposition chamber comprises the substrate holder, the gas input port, the gas output port and the electron cyclotron resonance plasma source.

来源网站：

中国工程科技知识中心

来源网址：

http://www.ckcest.cn/home/