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SYSTEMS AND METHODS FOR SINGLE MAGNETRON SPUTTERING
专利权人:
Advanced Energy Industries, Inc.
发明人:
CHRISTIE, David,LARSON, Skip, B.
申请号:
EP20160831032
公开号:
EP3189175(A1)
申请日:
2016.07.15
申请国别(地区):
欧洲专利局
年份:
2017
代理人:
摘要:
A system and method for single magnetron sputtering are described. One example includes a system having a power supply, a plasma chamber enclosing a substrate, an anode, and a target for depositing a thin film material on the substrate. This example also has a datastore with uncoated anode characterization data and an anode sputtering adjustment system including an anode analysis component to generate a first health value. The first health value is indicative of whether the anode is coated with a dielectric material. This example also has an anode power controller to receive the first health value and provide an anode-energy-control signal to the pulse controller of the pulsed DC power supply to adjust a second anode sputtering energy relative to a first anode sputtering energy to eject at least a portion of the dielectric material from the anode.
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中国工程科技知识中心
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