SEMICONDUCTOR DEVICE HAVING BURIED MULTI-CHANNEL STRUCTURE AND METHOD OF THE SAME
- 专利权人:
- SK HYNIX INC.
- 发明人:
- RYU, SEONG WAN
- 申请号：
- KR20120050958
- 公开号：
- KR20130127206(A)
- 申请日:
- 2012.05.14
- 申请国别(地区):
- 韩国
- 年份:
- 2013
- 代理人:
- 摘要：
The present invention relates to a semiconductor device including an embedded multi-channel structure. The semiconductor device and a manufacturing method thereof can increase an operating current by using a multi-channel structure embedded into a substrate and improve simplex channel effect. The semiconductor device and the manufacturing method thereof also can prevent an electron from being trapped in the lower part of a gate by including a trap preventing film in the lower part of the gate.
- 来源网站：
- 中国工程科技知识中心
