Metal nitride material for thermistor, method for producing same, and film type thermistor sensor

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专利权人:

MITSUBISHI MATERIALS CORPORATION

发明人:

Fujita Toshiaki,Tanaka Hiroshi,Nagatomo Noriaki

申请号：

US201414895794

公开号：

US9754706(B2)

申请日:

2014.05.28

申请国别(地区):

美国

年份:

2017

代理人:

Locke Lord LLP

摘要：

Provided are a metal nitride material for a thermistor, which has a high heat resistance and a high reliability and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: (M1−vVv)xAly(N1−wOw)z (where 0.0

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中国工程科技知识中心

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http://www.ckcest.cn/home/