Method for producing the P-N junction of a thin-film photovoltaic cell and corresponding method for producing a photovoltaic cell

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专利权人:

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

发明人:

Altamura Giovanni,Grenet Louis,Perraud Simon,Roux Frédéric

申请号：

US201414892462

公开号：

US9640687(B2)

申请日:

2014.05.23

申请国别(地区):

美国

年份:

2017

代理人:

Christensen O'Connor Johnson Kindness PLLC

摘要：

A method for producing a P-N junction in a thin film photovoltaic cell comprising a deposition step in which are carried out successively: a layer of precursors of a photovoltaic material of type P or N, a barrier layer and a layer of precursors of a semiconducting material of type N or P, this deposition step being followed by an annealing step carried out with a supply of S and/or Se, this annealing step leading to the formation of an absorbing layer of the type P or N and of a buffer layer of type N or P and of a P-N junction at the interface between said layers.

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中国工程科技知识中心

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http://www.ckcest.cn/home/