An integrated device includes a substrate, first and second vertical transistors and first and second common epitaxy. The substrate includes an upper surface with first substrate regions doped with a first dopant and second substrate regions doped with a second dopant. The first vertical transistor is operably disposed on the upper surface at a first one of the first substrate regions. The second vertical transistor is operably disposed on the upper surface at a first one of the second substrate regions. The first diode is operably disposed on the upper surface at a second one of the first substrate regions. The second diode is operably disposed on the upper surface at a second one of the second substrate regions. The first common epitaxy is provided for the first vertical transistor and the second diode and the second common epitaxy is provided for the second vertical transistor and the first diode.
