Semiconductor device having field plate structures and gate electrode structures between the field plate structures

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专利权人:

Infineon Technologies Austria AG

发明人:

Poelzl Martin

申请号：

US201614993624

公开号：

US9691862(B2)

申请日:

2016.01.12

申请国别(地区):

美国

年份:

2017

代理人:

Murphy, Bilak & Homiller, PLLC

摘要：

A semiconductor device includes a field effect transistor in a semiconductor substrate having a first surface. The field effect transistor includes a first field plate structure and a second field plate structure, each extending in a first direction parallel to the first surface, and gate electrode structures disposed over the first surface and extending in a second direction parallel to the first surface, the gate electrode structures being disposed between the first and the second field plate structures.

来源网站：

中国工程科技知识中心

来源网址：

http://www.ckcest.cn/home/