Epitaxial structure with pattern mask layers for multi-layer epitaxial buffer layer growth

• 收藏
• 分享

专利权人:

PlayNitride Inc.

发明人:

Lai Yen-Lin,Wu Jyun-De

申请号：

US201514809271

公开号：

US9548417(B2)

申请日:

2015.07.26

申请国别(地区):

美国

年份:

2017

代理人:

Jianq Chyun IP Office

摘要：

An epitaxial structure including an epitaxial substrate, a first buffer layer, a first pattern mask layer, a second buffer layer and a second pattern mask layer. The first buffer layer is disposed on the epitaxial substrate. The first pattern mask layer is disposed on the first buffer layer. The second buffer layer is disposed on the first pattern mask layer and a part of the first buffer layer. The second pattern mask layer is disposed on the second buffer layer. A projection of the first pattern mask layer projected on the first buffer layer and a projection of the second pattern mask layer projected on the first buffer layer cover at least 70% of the total area of the first buffer layer.

来源网站：

中国工程科技知识中心

来源网址：

http://www.ckcest.cn/home/