Stefan Thalhammer,Markus Hofstetter,John Howgate,Martin Stutzmann
申请号：
US14003082
公开号：
US09402548B2
申请日:
2012.03.02
申请国别(地区):
US
年份:
2016
代理人:
摘要：
The invention relates to a radiation detector (10), in particular for detecting x-ray radiation, comprising a carrier substrate (11), a detector layer (12) which comprises GaN, is arranged on the carrier substrate (11) and has a thickness less than 50 μm, and contact electrodes (13) which form ohmic contacts with the detector layer (12). The invention also relates to a measurement device which is equipped with at least one such radiation detector (10).
